Nonvolatile memory device having multiple numbers of channel layers

ABSTRACT

A nonvolatile memory device according to an embodiment includes a substrate, a channel structure extending in a direction perpendicular to the substrate; a charge storage structure disposed to be in contact with the channel structure; and a cell electrode structure disposed to be in contact with the charge storage structure in a lateral direction, wherein the channel structure comprises a hole conduction layer and an electron conduction layer.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a divisional application of a U.S. patentapplication Ser. No. 16/558,678, filed on Sep. 3, 2019, which claimspriority under 35 U.S.C 119(a) to Korean Patent Application No.10-2018-0171068, filed on Dec. 27, 2018, which is herein incorporated byreference in its entirety.

BACKGROUND 1. Technical Field

Various embodiments of the present disclosure generally relate to memorydevices and, more particularly, to nonvolatile memory devices havingmultiple numbers of channel layers.

2. Related Art

As design rule dimensions decrease and the degree of integrationincreases, research on the structure of memory devices that canguarantee both structural stability and reliability of storage operationhas been continued. Recently, as a result of the research, a nonvolatilememory device having a storage cell structure of a three-dimensionalstructure has been proposed. As an example of the nonvolatile memorydevice having a three-dimensional storage cell structure, a nonvolatilememory device having a channel layer extending in a directionperpendicular to a substrate and a plurality of memory cells stacked tobe in contact with the channel layer in a lateral direction has beenproposed.

SUMMARY

Embodiments of the present disclosure provide nonvolatile memory devicesthat can guarantee the structural stability and operational reliability.

A nonvolatile memory device according to an aspect of the presentdisclosure includes a substrate, a cell electrode structure disposed onthe substrate and including interlayer insulating layers and gateelectrode layers that are alternately stacked, a trench penetrating thecell electrode structure on the substrate, a charge storage structuredisposed on a sidewall surface of the trench, and a channel structuredisposed adjacent to the charge storage structure and extending in adirection parallel to the sidewall surface. The channel structureincludes a separate hole conduction layer and an adjacent and separateelectron conduction layer. The charge storage structure comprises acharge barrier layer, a charge trap layer and a charge tunneling layerthat are sequentially disposed on the sidewall surface and extendparallel to the sidewall surface. The hole conduction layer is disposedon the charge storage structure and the electron conduction layer isdisposed on the hole conduction layer. A hole mobility of the holeconduction layer is greater than a hole mobility of the electronconduction layer, and an electron mobility of the electron conductionlayer is greater than an electron mobility of the hole conduction layer.The hole conduction layer comprises a semiconductor material selectedfrom at least one of silicon (Si), germanium (Ge), silicon germanium(SiGe), gallium arsenic (GaAs) and indium gallium arsenic (InGaAs). Theelectron conduction layer comprises indium-gallium-zinc (In—Ga—Zn)oxide. A control electrode structure disposed over or below the cellelectrode structure within a control portion of the trench and includingan interlayer dielectric layer and a control electrode layer, a controldielectric layer disposed to be in contact with the control electrodestructure on a sidewall surface of the control portion of the trench,and a control channel layer disposed adjacent to the control dielectriclayer and electrically connected to the channel structure. The controlchannel layer is a portion of the electron conduction layer configuredto extend along the control dielectric layer on the sidewall of thecontrol portion of the trench. The hole conduction layer is configuredfor a memory erase operation and disposed on the charge storagestructure but not on an adjacent control structure, and the electronconduction layer is configured for a memory program operation, anddisposed on the hole conduction layer, and disposed on a controldielectric layer of the adjacent control structure, and disposed therebetween.

A nonvolatile memory device according to another aspect of the presentdisclosure includes a substrate, a channel structure extending in adirection perpendicular to the substrate, a charge storage structuredisposed to be in contact with the channel structure, and a cellelectrode structure disposed to be in contact with the charge storagestructure in a lateral direction. The channel structure includes aseparate hole conduction layer and an adjacent and separate electronconduction layer. The hole conduction layer and the electron conductionlayer are disposed to be in contact with each other along a directionperpendicular to the substrate. The charge storage layer includes acharge tunneling layer in contact with the channel structure, a chargetrap layer in contact with the charge tunneling layer, and a chargebarrier layer in contact with the charge trap layer. The cell electrodestructure comprises a gate electrode layer disposed adjacent to thecharge barrier layer in a lateral direction. A hole mobility of the holeconduction layer is greater than a hole mobility of the electronconduction layer, and an electron mobility of the electron conductionlayer is greater than an electron mobility of the hole conduction layer.The electron conduction layer comprises indium-gallium-zinc (In—Ga—Zn)oxide. The hole conduction layer includes a semiconductor materialincluding a hole as a charge carrier. The semiconductor materialincludes at least one of silicon (Si), germanium (Ge), silicon germanium(SiGe), gallium arsenic (GaAs) and indium gallium arsenic (InGaAs).

A nonvolatile memory device according to another aspect of the presentdisclosure includes a cell electrode structure disposed on a substrateand including insulating interlayers and gate electrode layers that arealternately stacked, a trench penetrating the cell electrode structureperpendicular to the substrate, the trench having a sidewall surface, acharge storage structure disposed concentrically with and parallel tothe sidewall surface of the trench, a channel structure disposedadjacent to the charge storage structure, and comprising a separate holeconduction layer and an adjacent and separate electron conduction layer,and a control channel structure disposed over or below the cellelectrode structure within a control portion of the trench and includinga interlayer insulating layer and a control channel layer extendingalong the sidewall of the control portion of the trench. The controlchannel layer is a portion of the electron conduction layer and isconfigured to electrically connect to the channel structure, and to thecharge storage structure. The control dielectric layer and the chargebarrier layer are discrete but contiguous from the control channelstructure to the charge storage structure. The control channel includesan indium gallium arsenic (InGaAs) layer underneath anindium-gallium-zinc-oxide (IGZO) layer configured to decrease a leakagecurrent through the cell electrode structure with reference to a leakagecurrent through a doped polysilicon cell electrode. A thickness of thecontrol channel structure is equal to or less than a thickness of adoped polysilicon control channel structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram schematically illustrating a nonvolatilememory device according to an embodiment of the present disclosure.

FIG. 2 is a cross-sectional view schematically illustrating anonvolatile memory device according to an embodiment of the presentdisclosure.

FIG. 3 is an enlarged view of the portion A of the nonvolatile memorydevice of FIG. 2 .

FIG. 4 is an enlarged view of the portion B of the nonvolatile memorydevice of FIG. 2 .

FIG. 5 is a schematic view illustrating program and erase operations ofa memory cell transistor according to an embodiment of the presentdisclosure.

FIG. 6 is a schematic view explaining an electric potential of a channellayer in a nonvolatile memory device according to an embodiment of thepresent disclosure.

FIG. 7A is an energy band diagram illustrating an energy level of achannel layer in a nonvolatile memory device according to a comparativeexample of the present disclosure.

FIG. 7B is an energy band diagram illustrating an energy level of theelectron conduction layer in a nonvolatile memory device according to anembodiment of the present disclosure.

DETAILED DESCRIPTION

Various embodiments will now be described hereinafter with reference tothe accompanying drawings. In the drawings, the dimensions of layers andregions may be exaggerated for clarity of illustration. The drawings aredescribed with respect to an observer's viewpoint. If an element isreferred to be located on another element, it may be understood that theelement is directly located on the other element, or an additionalelement may be interposed between the element and the other element. Thesame reference numerals refer to the same elements throughout thespecification.

In addition, expression of a singular form of a word should beunderstood to include the plural forms of the word unless clearly usedotherwise in the context. It will be understood that the terms“comprise” or “have” are intended to specify the presence of a feature,a number, a step, an operation, an element, a part, or combinationsthereof, but not used to preclude the presence or possibility ofaddition one or more other features, numbers, steps, operations,components, parts, or combinations thereof.

An embodiment of the present disclosure provides a nonvolatile memorydevice having a memory cell transistor and a control transistor. FIG. 1is a circuit diagram schematically illustrating a nonvolatile memorydevice according to an embodiment of the present disclosure. Referringto FIG. 1 , the nonvolatile memory device 1 may include a cell arrayhaving a plurality of strings 100 a and 100 b. One end of each of thestrings 100 a and 100 b may be connected to a common source line SL, andanother end of each of the strings 100 a and 100 b may be connected todifferent bit lines BL1 and BL2. In one embodiment, the cell array mayconstitute NAND type flash memory cells. Although, in exemplary FIG. 1 ,only a first string 100 a and a second string 100 b are illustrated forthe convenience of explanation, it is not necessarily limited thereto.The number of strings constituting the cell array is not limited.

The first string 100 a may have first to sixth memory cell transistorsMC1, MC2, MC3, MC4, MC5 and MC6 and a first control transistor TR1connected in series. The first control transistor TR1 may be disposedbetween the sixth cell transistor MC6 and a first bit line BL1. Thesecond string 100 b may have seventh to twelfth memory cell transistorsMC7, MC8, MC9, MC10, MC11 and MC12 and a second control transistor TR2connected in series. The second control transistor TR2 may be disposedbetween the twelfth cell transistor MC12 and a second bit line BL2.

The first to twelfth memory cell transistors MC1, MC2, MC3, MC4, MC5,MC6, MC7, MC8, MC9, MC10, MC11 and MC12 may each have a charge storagestructure as a gate dielectric layer structure. The charge storagestructure may include a charge trap layer for trapped electrons.Depending on whether the charge trap layer is filled with electrons oremptied, different signal information can be stored. A first signalinformation, includes electrons stored in the charge trap layer, whichincrease a threshold voltage of the memory cell transistor during theread operation, and enables the first signal information to beidentified. The second signal information, includes electrons emptiedfrom the charge trap layer, which decrease the threshold voltage of thememory cell transistor during the read operation, enabling the secondsignal information to be identified.

The first and second control transistors TR1 and TR2 perform a switchingfunction to switch on/off a channel current between the first and secondbit lines BL1 and BL2 and the common source line SL, and a controlfunction to control the magnitude of the channel current conductionthrough channel layers ch-t1 and ch-t2. The controlled channel currentmay be provided to the first to the twelfth channel layers ch1, ch2,ch3, . . . , ch10, ch11 and ch12 of the first to twelfth memory celltransistors MC1, MC2, MC3, . . . , MC10, MC11 and MC12. During thepassing of the controlled channel current through the first to twelfthchannel layers ch1, ch2, ch3, . . . , ch10, ch11 and ch12, charges inthe channel participate in the program or erase operation of thecorresponding first to twelfth memory cell transistors MC1, MC2, MC3, .. . , MC10, MC11 and MC12.

Although, in FIG. 1 , each of the first and second strings 100 a and 100b is illustrated to have six memory cell transistors for the convenienceof explanation, it is not necessarily limited thereto. The number of thememory cell transistors constituting each of the first and secondstrings 100 a and 100 b is not limited. In addition, in some otherembodiments, the first control transistor TR1 may be disposed betweenthe source line SL and the first memory cell transistor MC1 (notillustrated). Further, the second control transistor TR2 may be disposedbetween the source line SL and the seventh memory cell transistor MC7(not illustrated).

In an embodiment of the disclosure, the first to sixth memory celltransistors MC1, MC2, MC3, MC4, MC5 and MC6 in the first string 100 amay each be connected to different first to sixth word lines WL1, WL2,WL3, WL4, WL5 and WL6, respectively. The first control transistor TR1may be connected to the seventh word line WL7. Likewise, the seventh totwelfth memory cell transistors MC7, MC8, MC9, MC10, MC11 and MC12 inthe second string 100 b may each be connected to different first tosixth word lines WL1, WL2, WL3, WL4, WL5 and WL6, respectively. Thesecond control transistor TR2 may be connected to the seventh word lineWL7.

The first to sixth word lines WL1, WL2, WL3, WL4, WL5 and WL6 mayprovide a program voltage or an erase voltage to a memory gate electrodelayer of the first to twelfth memory cell transistors MC1, MC2, MC3, . .. , MC10, MC11 and MC12. In an embodiment, the program voltage may be avoltage that induces electrons to tunnel from the channel layers ch1,ch2, ch3, . . . , ch10, ch11 and ch12 into the charge trap layer. Theelectrons which have tunneled into the charge trap layer may be storednon-volatilely in the charge trap layer. The erase voltage may, forexample, allow holes to tunnel from the channel layers ch1, ch2, ch3, .. . , ch10, ch11 and ch12 into the charge trap layer to be recombinedwith the electrons stored in the charge trap layer. By the recombinationof the electrons and holes, the electrons stored in the charge traplayer are effectively removed.

The seventh word line WL7 may provide a control voltage applied tocontrol gate layers of the first and second control transistors TR1 andTR2. The magnitude of the current passing through the first controlchannel layer ch-t1 or the second control channel layer ch-t2 isadjusted by changing the control voltage, to a state in which apredetermined voltage is applied between the source line SL and thefirst bit line BL1 or between the source line SL and the second bit lineBL2. As an example, as the magnitude of the control voltage isincreased, the current passing through the first control channel layerch-t1 or the second control channel layer ch-t2 is increased to apredetermined saturation current which is generated in the first andsecond control transistors TR1 and TR2.

In an embodiment, a predetermined control voltage is applied to thecontrol gate electrode layer, and a predetermined operation voltage isapplied between the first bit line BL1 and the common source line SL. Achannel current, having a predetermined magnitude, flows through thefirst to sixth channel layers ch1, ch2, ch3, ch4, ch5 and ch6 and thefirst control channel layer ch-t1. At this time, a program voltage isapplied to a gate electrode layer of at least one memory cell transistorselected from the first to sixth memory cell transistors MC1, MC2, MC3,MC4, MC5 and MC6, to enable electrons to tunnel from the channel layerof the selected at least one memory cell transistor into the charge traplayer. The tunneled electrons are stored in the charge trap layer, sothat a program operation for the selected memory cell transistor can beperformed.

In the same way, in another embodiment, a predetermined control voltageis applied to the control gate electrode layer, and a predeterminedoperation voltage is applied between the second bit line BL2 and thecommon source line SL. A channel current, having a predeterminedmagnitude, flows through the seventh to twelfth channel layers ch7, ch8,ch9, ch10, ch11 and ch12 and the second control channel layer ch-t2. Atthis time, a program voltage is applied to a gate electrode layer of atleast one memory cell transistor selected from the seventh to twelfthmemory cell transistors MC7, MC8, MC9, MC10, MC11 and MC12, to enableelectrons to tunnel from the channel layer of the selected at least onememory cell transistor into the charge trap layer, so that a programoperation for the selected memory cell transistor can be performed.

An erase operation is performed by applying an erase voltage to a gateelectrode layer of at least one memory cell transistor selected from thefirst to sixth memory cell transistors MC1, MC2, MC3, MC4, MC5 and MC6or from the seventh to twelfth memory cell transistors MC7, MC8, MC9,MC10, MC11 and MC12. A predetermined operation voltage is appliedbetween the first bit line BL1 and the common source line SL or betweenthe second bit line BL2 and the common source line SL. The holes whichhave tunneled from the channel layer corresponding to the selected atleast one memory cell transistor to the charge trap layer are recombinedwith the electrons stored in the charge trap layer, so that theelectrons are effectively removed. The erase operation for the selectedmemory cell transistor is thus effectively performed.

FIG. 2 is a cross-sectional view schematically illustrating anonvolatile memory device according to an embodiment of the presentdisclosure. The illustration includes trenches 10, the substrate 101, abase conduction layer 105, channel core 140, bit lines 150, the cellelectrode structure 2 a, and the control electrode structure 2 b. Thecell electrode structure 2 a includes the first to seventh insulatinglayers 110 a, 110 b, 110 c, 110 d, 110 e, 110 f and 110 g and the firstto sixth gate electrode layers 210 a, 210 b, 210 c, 210 d, 210 e and 210f, which are alternately stacked as depicted. The control electrodestructure 2 b includes the insulating layer 110 h and the gate electrodelayer 210 g as depicted.

FIG. 3 is an enlarged view of a portion A of the nonvolatile memorydevice of FIG. 2 . The nonvolatile memory device 2 according to theembodiment of the present disclosure may include multiple memory celltransistors connected to each other in a direction perpendicular to asubstrate. The illustration includes features and reference numbers sameor similar to those of FIG. 2 and further includes the charge storagestructure 310, the control dielectric layer 314, the channel structure320, and the electron conduction layer 322. The charge storage structure310 includes the charge barrier layer 311, the charge trap layer 312,and the charge tunneling layer 313. The channel structure 320 includesthe hole conduction layer 321, and the electron conduction layer 322.

FIG. 4 is an enlarged view of a portion B of the nonvolatile memorydevice of FIG. 2 . The nonvolatile memory device 2 illustrated in FIGS.2 to 4 may correspond to the nonvolatile memory device 1 implemented inthe circuit diagram of FIG. 1 . In FIGS. 2 to 4 , memory celltransistors of the nonvolatile memory device 2 may correspond to regionsincluding gate electrode layers 210 a, 210 b, 210 c, 210 d, 210 e and210 f, and a charge storage structure 310 and a channel structure 320covered by the gate electrode layers 210 a, 210 b, 210 c, 210 d, 210 eand 210 f, respectively. Likewise, the control gate of the nonvolatilememory device 2 may correspond to regions including a control gateelectrode layer 210 g, a control dielectric layer 314, and an electronconduction layer 322 covered by the control electrode layer 210 g.

Referring again to FIGS. 2 to 4 , an embodiment of the nonvolatilememory device 2 may include a substrate 101, a base conduction layer 105disposed on the substrate 101, and a cell electrode structure 2 adisposed on the base conduction layer 105. In addition, the nonvolatilememory device 2 may include a control electrode structure 2 b disposedon the cell electrode structure 2 a. Further, the nonvolatile memorydevice 2 may include trenches 10 penetrating the cell electrodestructure 2 a and the control electrode structure 2 b on the substrate101. A charge storage structure 310, and a channel structure 320 aredisposed on a sidewall surface of each of the trenches 10 perpendicularto the substrate 101. Additionally, the control dielectric layer 314 andthe electron conduction layer 322, as control channel layers may bedisposed along a direction perpendicular to the substrate 101, forexample, z-direction. In an embodiment, the electron conduction layer322 disposed on the control dielectric layer 314 may function as thecontrol channel layer controlled by the control transistor.

In an embodiment, the substrate 101 may be a semiconductor substrate.The semiconductor substrate may, for example, be a silicon (Si)substrate, a gallium arsenic (GaAs) substrate, an indium phosphide (InP)substrate, a germanium (Ge) substrate, or a silicon germanium (SiGe)substrate. The semiconductor substrate may be doped into n-type orp-type to have conductivity. In another embodiment, the substrate 101may be an insulative substrate like a silicon-on-insulator (SOI)substrate. In another embodiment, the substrate 101 may be a conductivesubstrate like a metal substrate.

Furthermore, in embodiments of the disclosure, the base conduction layer105 may, for example, include doped semiconductor, metal, conductivemetal nitride or conductive metal silicide. In an example, the baseconduction layer 105 may include n-type doped silicon. In anotherexample, the base conduction layer 105 may include tungsten (W),titanium (Ti), copper (Cu), aluminum (Al), tungsten nitride, titaniumnitride, tantalum nitride, tungsten silicide, titanium silicide,tantalum silicide or a combination of two or more thereof. In anembodiment, the base conduction layer 105 may be electrically connectedto a source line (not illustrated). In another embodiment, the baseconduction layer 105 may be a source line.

In some embodiments, though it is not illustrated, the substrate 101 mayinclude a well doped with an n-type dopant or a p-type dopant. Varioustypes of semiconductor integrated circuits may be disposed between thesubstrate 101 and the base conduction layer 105. As an example, one ormore conductive circuit pattern layers and one or more insulatingpattern layers for insulating the conductive circuit pattern layers maybe disposed between the substrate 101 and the base conduction layer 105.

In other words, the cell electrode structure 2 a may be disposed on thebase conduction layer 105. The cell electrode structure 2 a may includethe first to seventh interlayer insulating layers 110 a, 110 b, 110 c,110 d, 110 e, 110 f and 110 g and the first to sixth gate electrodelayers 210 a, 210 b, 210 c, 210 d, 210 e and 210 f, which arealternately stacked.

As illustrated, the first interlayer insulating layer 110 a may contactthe base conduction layer 105. The first to seventh interlayerinsulating layers 110 a, 110 b, 110 c, 110 d, 110 e, 110 f and 110 g mayeach, for example, include insulative oxide, insulative nitride,insulative oxynitride or the like. The first to seventh interlayerinsulating layers 110 a, 110 b, 110 c, 110 d, 110 e, 110 f and 110 g mayeach, for example, include silicon oxide, silicon nitride, or siliconoxynitride.

Furthermore, the first to sixth gate electrode layers 210 a, 210 b, 210c, 210 d, 210 e and 210 f may each be electrically connected to a wordline (not illustrated) of the nonvolatile memory device 2. The first tosixth gate electrode layers 210 a, 210 b, 210 c, 210 d, 210 e and 210 fmay each, for example, include metal, conductive metal nitride,conductive metal silicide, conductive metal oxide, conductive metalcarbide or the like. The first to sixth gate electrode layers 210 a, 210b, 210 c, 210 d, 210 e and 210 f may each, for example, include tungsten(W), titanium (Ti), copper (Cu), ruthenium (Ru), tungsten nitride,titanium nitride, tantalum nitride, ruthenium oxide, tungsten carbide,titanium carbide, tungsten silicide, titanium silicide, tantalumsilicide or a combination of two or more thereof.

Although, in FIGS. 2 to 4 , the first to seventh interlayer insulatinglayers 110 a, 110 b, 110 c, 110 d, 110 e, 110 f and 110 g and the firstto sixth gate electrode layers 210 a, 210 b, 210 c, 210 d, 210 e and 210f are disclosed for the convenience of explanation, the numbers of theinterlayer insulating layer and gate electrode layers are not be limitedto any certain number.

Additionally, the control electrode structure 2 b may be disposed on thecell electrode structure 2 a along the z-direction relative to thesubstrate. The control electrode structure 2 b may include an eighthinterlayer insulating layer 110 h and a control electrode layer 210 g.The configurations of the eighth interlayer insulating layer 110 h andthe control electrode layer 210 g may be substantially the same as theconfigurations of the first to seventh interlayer insulating layers 110a, 110 b, 110 c, 110 d, 110 e, 110 f and 110 g and the first to sixthgate electrode layers 210 a, 210 b, 210 c, 210 d, 210 e and 210 f.

Referring to FIGS. 2 to 4 again, a charge storage structure 310 is incontact with the cell electrode structure 2 a on the sidewall surface ofthe trench 10. The control dielectric layer 314 is in contact with thecontrol electrode structure 2 b on the sidewall surface of the trench 10as well. In an embodiment, the charge storage structure 310 mayconstitute first to sixth memory cell transistors with the first tosixth gate electrode layers 210 a, 210 b, 210 c, 210 d, 210 e and 210 fand the channel structure 320. The first to sixth memory celltransistors may correspond to the first to sixth memory cell transistorsMC1, MC2, MC3, MC4, MC5 and MC6 of the first string 100 a. The seventhto twelfth memory cell transistors may correspond to the seventh totwelfth memory cell transistors MC7, MC8, MC9, MC10, MC11 and MC12 ofthe second string 110 b, as described above with reference to FIG. 1 .In an embodiment of the disclosure, the charge storage structure 310 mayinclude a charge barrier layer 311, a charge trap layer 312 and a chargetunneling layer 313 that are sequentially disposed from the sidewallsurface of the trench 10.

The charge barrier layer 311 may function to suppress the movement ofelectrons or holes introduced into the charge trap layer 312 from thechannel structure 320 to the gate electrode layers 210 a, 210 b, 210 c,210 d, 210 e and 210 f. In an embodiment, the charge barrier layer 311may include oxide. As an example, the charge barrier layer 311 may be asilicon oxide layer.

The charge trap layer 312 may trap electrons introduced from the channelstructure 320 in the trap sites of the charge trap layer 312 to storethe electrons in a nonvolatile manner during a program operation. Inaddition, the charge trap layer 312 may function to erase the storedelectrons by recombining holes introduced from the channel structure 320with the electrons stored in the charge trap layer 312 during an eraseoperation. The charge trap layer 312 may have a band gap energy lowerthan a band gap energy of the charge barrier layer 311 and lower than aband gap energy of the charge tunneling layer 313. In an embodiment, thecharge trap layer 312 may include nitride or oxynitride. As an example,the charge trap layer 312 may be a silicon nitride layer or a siliconoxynitride layer.

Furthermore, the charge tunneling layer 313 may tunnel the electrons orholes of the channel structure 320 to the charge trap layer 312 when avoltage applied to the gate electrode layers 210 a, 210 b, 210 c, 210 d,210 e and 210 f in the cell electrode structure 2 a is a predeterminedthreshold voltage or higher. When the voltage applied to the gateelectrode layers 210 a, 210 b, 210 c, 210 d, 210 e and 210 f is lowerthan the predetermined threshold voltage, the charge tunneling layer 313may function as a barrier layer that prevents electrons or holes frommoving between the channel structure 320 and the charge trap layer 312.In an embodiment, the charge tunneling layer 313 may include oxide,nitride, or oxynitride. The charge tunneling layer 313 may, for example,be a silicon nitride layer or a silicon oxynitride layer. The chargetunneling layer 313 may be a stack structure of at least one thin film.As an example, the charge tunneling layer 313 may be a silicon oxidelayer. As another example, the charge tunneling layer 313 may be a thinfilm structure in which one or more silicon oxide layer and one or moresilicon oxynitride layers are stacked.

In other words, the control dielectric layer 314 may constitute acontrol transistor with the control electrode layer 210 g and anelectron conduction layer 322. The control transistor may correspond tothe first control transistor TR1 of the first string 100 a or the secondcontrol transistor TR2 of the second string 100 b, described above withreference to FIG. 1 . The control dielectric layer 314 may not have thecharge trap layer of the memory cell transistor because the controltransistor performs the function of determining the magnitude of thecurrent conducting along the electron conduction layer 322. The controldielectric layer 314 may be a dielectric layer having a predetermineddielectric constant. The control dielectric layer 314 may, for example,include oxide, nitride or oxynitride. As a specific example, the controldielectric layer 314 may include silicon oxide, silicon nitride, siliconoxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafniumoxide or a combination of two or more thereof.

Referring to FIGS. 2 to 4 again, the channel structure 320 may bedisposed adjacent to the charge storage structure 310 and the electronconduction layer 322 may be disposed adjacent to the control dielectriclayer 314 on the sidewall surface of the trench 10. The channelstructure 320 may include a hole conduction layer 321 and the electronconduction layer 322. In an embodiment, the hole conduction layer 321may be disposed in contact with the charge tunneling layer 313 of thecharge storage structure 310, and the electron conduction layer 322 maybe disposed on the hole conduction layer 321. In some other embodimentsnot illustrated, the electron conduction layer 322 may be disposed incontact with the charge tunneling layer 313 of the charge storagestructure 310, and the hole conduction layer 321 may be disposed on theelectron conduction layer 322. As described above, the hole conductionlayer 321 and the electron conduction layer 322 may be disposed adjacentto each other and may extend in a lateral direction parallel to thesidewall surface of the trench 10. As an example, the hole conductionlayer 321 and the electron conduction layer 322 may be disposed in adirection perpendicular to the substrate 101, and in contact with eachother.

Referring again to FIG. 3 , the electron conduction layer 322 disposedon the control dielectric layer 314 may be a control transistor portion2 b of the trench 10. The electron conduction layer 322 also extendsinto a memory cell transistor region 2 a of the trench 10. The electronconduction layer 322 electrically connects the hole conduction layer 321to bit line 150 by making contact with the hole conduction layer 312 ina boundary region of the memory cell transistor and the controltransistor. In addition, referring to FIG. 4 , the hole conduction layer321 and the electron conduction layer 322 may be connected to the baseconduction layer 105. Since the base conduction layer 105 is the sourceline or connected to the source line, the hole conduction layer 321 andthe electron conduction layer 322 are electrically connected to thesource line.

Referring further to FIG. 3 , the electron conduction layer 322 enablesa memory program operation and is disposed on the hole conduction layer321 and disposed on the control dielectric layer 314 and is disposedthere between. Additionally, the control dielectric layer 314 and thecharge barrier layer 311 are discrete but contiguous from the controlchannel structure to the charge storage structure as depicted bydifferent cross-hatched layers.

In an embodiment, the hole mobility of the hole conduction layer 321 maybe greater than the hole mobility of the electron conduction layer 322.In another embodiment, the hole mobility of the hole conduction layer321 may be greater than the electron mobility of the hole conductionlayer 321. In an embodiment, the electron mobility of the electronconduction layer 322 may be greater than the hole mobility of theelectron conduction layer 322.

When a predetermined voltage is applied between the bit line 150 and thebase conduction layer 105, holes can conduct through the hole conductionlayer 321 and electrons can conduct through the electron conductionlayer 322 in the memory cell transistor region 2 a. On the other hand,electrons and holes can conduct through the electron conduction layer322 in the control transistor region 2 b.

In an embodiment, the hole conduction layer 321 may include asemiconductor material having hole as a charge carrier. Thesemiconductor material may, for example, include silicon (Si), germanium(Ge), silicon germanium (SiGe), gallium arsenic (GaAs), indium galliumarsenic (InGaAs) or a combination of two or more thereof. In anembodiment, the semiconductor material may not be doped, or may be dopedwith a p-type dopant.

In an embodiment, the electron conduction layer 322 may include an oxidesemiconductor material. As an example, the electron conduction layer 322may include indium-gallium-zinc (In—Ga—Zn) oxide. Theindium-gallium-zinc (In—Ga—Zn) oxide may be crystalline or amorphous. Asan example, the indium-gallium-zinc (In—Ga—Zn) oxide may be C-axisaligned crystalline indium-gallium-zin oxide (In—Ga—Zn, CAAC-IGZO). Theelectron mobility of the electron conduction layer 322 may be greaterthan the electron mobility of a conventional channel layer formed ofdoped poly-silicon.

FIG. 5 is a schematic view illustrating program and erase operations ofa memory cell transistor according to an embodiment of the presentdisclosure. FIG. 5 represents the memory cell transistor portion of thenonvolatile memory device described above with reference to FIGS. 1 to 4.

Referring to FIGS. 1 to 5 , when a predetermined operation voltage isapplied between the bit line 150 and the base conduction layer 105, achannel current is controlled to a predetermined magnitude by thecontrol transistor and the channel structure 320 of the memory celltransistor through the electron conduction layer 322. Therefore, channelcurrent electron and hole components in the channel structure 320 areconducted through different paths as follows.

In an embodiment, the base conduction layer 105 is connected to a groundline and a predetermined positive bias is applied to the bit line 150.Holes 321 h may be conducted mainly in a first direction Dh along thehole conduction layer 321, and electrons 322 e may be conducted mainlyin a second direction De along the electron conduction layer 322. Incontrast, the mobility of holes and electrons are increased by the holeconduction layer 321 and the electron conduction layer 322 of thisembodiment applied together, rather than holes and electrons conductedtogether in a single channel layer of doped poly-silicon.

At this time, a program voltage having a positive polarity is applied toat least one of the gate electrode layers 210 a, 210 b, 210 c, 210 d,210 e and 210 f, to enable electrons 322 e in the electron conductionlayer 322 to pass through the hole conduction layer 321 and the chargetunneling layer 313 and move in the lateral direction Te, therebyentering the charge trap layer 312. The electrons entering and trappedin trap sites of the charge trap layer 312 are stored as signalinformation. Likewise, when a program voltage having a negative polarityis applied to at least one of the gate electrode layers 210 a, 210 b,210 c, 210 d, 210 e and 210 f, holes 321 h in the hole conduction layer321 pass through the charge tunneling layer 313 and move in the lateraldirection Th, thereby entering the charge trap layer 312. The holes 321h entering the charge trap layer 312 are recombined with the electronstrapped at the trap sites of the charge trap layer 312, so that theelectrons are effectively erased from the charge trap layer 312.

Consequently, in an embodiment of the present disclosure, the channelstructure 320, including the hole conduction layer 321 and the electronconduction layer 322 may be used to improve the mobility of holes andelectrons conducted through the channel structure 320. Accordingly, agate voltage is applied to a predetermined gate electrode layer enablesthe rate at which charges are introduced into the charge trap layer 312from the channel structure 320 to be increased.

Referring to FIGS. 1 and 2 , increasing the memory capacity byincreasing the number of memory cells connected to one string, thelength of a channel layer extending in a direction perpendicular to thesubstrate 101 can be increased. Accordingly, during conventional programand erase operations, the channel layers of multiple memory celltransistors may not be supplied with a channel current of a sufficientmagnitude for tunneling to a charge trap layer. According to embodimentsof the present disclosure, in the channel structure, the channel layerin which holes and electrons are conducted are separated into a holeconduction layer and an electron conduction layer, respectively. Inaddition, in the case of the hole conduction layer, it can be configuredto include a material capable of improving hole mobility, and in thecase of the electron conduction layer, it can be configured to include amaterial capable of improving electron mobility. Consequently, asdescribed above, when the cell integration of the nonvolatile memorydevice increases, the channel current supplied to a plurality of memorycell transistors can also be increased and at least be prevented fromdecreasing.

In the embodiment of the present disclosure, a metal oxide that haselectron mobility greater than that of the conventional dopedpoly-silicon or doped monocrystalline silicon and has a band gap energygreater than that of the conventional doped poly-silicon or dopedmonocrystalline silicon can be applied as the electron conduction layer322 of the channel structure 320. As an example, the metal oxide mayinclude crystalline indium-gallium-zinc (In—Ga—Zn) oxide. With the metaloxide applied to the electron conduction layer 322, the reliability of aprogram operation can be improved in a region where the channelpotential changes between the control transistor and the memory celltransistor. This configuration will be described in more detail belowwith reference to FIGS. 6, 7A and 7B.

FIG. 6 is a schematic view illustrating an electric potential of achannel layer in a nonvolatile memory device according to an embodimentof the present disclosure. Channel electric potential is indicated bythe ordinate and channel regions are indicated by the abscissa.

The nonvolatile memory device illustrated has substantially the sameconfiguration as that of the nonvolatile memory device 2 described abovewith reference to FIGS. 2 to 4 . For convenience of explanation, theelectron conduction layer 322 of the control transistor or of thechannel structure 320 of the memory cell transistor of FIGS. 2 to 4 , issimplified to a channel layer 630. In addition, the control dielectriclayer 314 and the charge storage structure 310 of FIGS. 2 to 4 aresimplified to a control dielectric layer 612 and a cell dielectric layer622, respectively. Furthermore, the control electrode layer 210 g andthe sixth gate electrode layer 210 f of FIGS. 2 to 4 are simplified to acontrol electrode layer 610 and a cell electrode layer 620,respectively.

In the embodiment of FIG. 6 , a first channel region between a firstchannel point C1 and a second channel point C2 corresponds to a regionof the electron conduction layer 322 from the bit line 150 to aninterface of the eighth interlayer insulating layer 110 h and thecontrol electrode layer 210 g along the z-direction in FIGS. 2 and 3 .In the first channel region, the channel layer 630 may have a firstchannel electric potential VC1. A second channel region between thesecond channel point C2 and a third channel point C3, where the channellayer 630 is controlled by the control electrode layer 610,corresponding to the electron conduction layer 322 covered by thecontrol electrode layer 210 g along the z-direction, in FIGS. 2 and 3 .In the second channel region, the channel layer 630 may have a secondchannel electric potential VC2 lower than the first channel electricpotential VC1.

Moreover, the electric potential of the channel layer 630 may beincreased from a third channel transitory electric potential VC3 to apredetermined fourth channel electric potential VC4 across a thirdchannel region. The third channel region from the third channel point C3covered by the control electrode layer 610 to a fourth channel point C4ends where the channel layer 630 is covered by the cell electrode layer620 in which the program and erase operations are performed. Theelectric potential of the channel layer 630 is increased to the fourthchannel electric potential VC4 by controlling the gate voltage appliedto the cell electrode layer 620.

FIG. 7A is an energy band diagram illustrating an energy level of achannel layer in a nonvolatile memory device according to a comparativeexample of the present disclosure. The exemplary energy band diagramillustrates the electron conduction layer between the third channelpoint C3 and the fourth channel point C4 of FIG. 6 for a conventionallydoped poly-silicon or doped monocrystalline silicon channel layer. Theenergy band diagram of FIG. 7A represents the changes of a conductionband energy Ec-a, a valence band energy Ev-a, and a band gap energy Eg-aof the electron conduction layer according to a gate voltage applied tothe cell electrode layer 620.

FIG. 7B is an energy band diagram illustrating an energy level of theelectron conduction layer in a nonvolatile memory device according tothe embodiment of the present disclosure. FIG. 7B illustrates an energyband diagram of the electron conduction layer between the third channelpoint C3 and the fourth channel point C4 in FIG. 6 . In the embodiment,a crystalline indium-gallium-zinc (In—Ga—Zn) oxide forms the electronconduction layer in the channel layer 630. The energy band diagram ofFIG. 7B represents the changes of a conduction band energy Ec-b, avalence band energy Ev-b and a band gap energy Eg-b of the electronconduction layer according to the gate voltage applied to the cellelectrode layer 620.

Referring to FIGS. 7A and 7B, the band gap energy Eg-b of the electronconduction layer of the FIG. 7B embodiment is greater than the band gapenergy Eg-a of the electron conduction layer of the FIG. 7A embodiment.As an example, the indium-gallium-zinc (In—Ga—Zn) oxide as an embodimenthas a band gap energy of about 3.2 electron volt (eV) to about 3.8electron volt (eV), while silicon as a comparative example has a bandgap energy of about 1.17 electron volt (eV).

A predetermined gate voltage applied to the cell electrode layer 620changes the channel electric potential at the third channel point C3 andat the fourth channel point C4 and generates a band bending phenomenonof the electron conduction layer, as illustrated in FIGS. 7A and 7B.

In the case of the comparative example in which the band gap energy ofthe electron conduction layer is relatively low, as a result of the bandbending of the electron conduction layer, there may be an increasedprobability that electrons 701 e existing in a region of the valenceband energy Ev-a directly tunnel to a region of the conduction bandenergy Ec-a (Ma1) or tunnel to a region of the conduction band energyEc-a (Ma2) via trap sites 710 in the electron conduction layer. As such,electrons 701 e tunneling to the conduction band energy Ec-a region aremainly conducted along the electron conduction layer by an electricfield applied between the source line and the bit line, thereby loweringthe efficiency of the program operation in which electrons areintroduced into the charge trap layer. That is, a gate voltage appliedto the cell electrode layer 620, conducts electrons 701 e tunneling bythe above-described operation mechanism not along the charge trap layerbut along the electron conduction layer, thereby acting as a leakagecurrent.

On the other hand, referring to the FIG. 7B embodiment, the band gapenergy of the electron conduction layer is relatively great in theregion between the third channel point C3 and the fourth channel pointC4, so the probability that electrons 701 e existing in the region ofthe valence band energy Ev-b directly tunnel (Mb) to the region of theconduction band energy Ec-b is decreased, and therefore the leakagecurrent created by the tunneling electrons 701 e described above issuppressed.

As described above, according to embodiments of the present disclosure,the inter-band tunneling phenomenon in which electrons or holes movefrom the valence band of the electron conduction layer to the conductionband is suppressed by applying a material having a higher band gapenergy than the conventional doped poly-silicon or doped monocrystallinesilicon to the electron conduction layer. Accordingly, the leakagecurrent generated by a gate voltage applied to the memory celltransistor adjacent to the control transistor is effectively suppressed.

In an embodiment of the disclosure, the control channel furthercomprises an indium gallium arsenic (InGaAs) layer underneath anindium-gallium-zinc-oxide (IGZO) layer configured to decrease a leakagecurrent through the cell electrode structure without dummy cells withreference to a doped polysilicon cell electrode with dummy cells in thebit line to source strings 100 a and 100 b of FIG. 1 (dummy cells notdepicted). A dummy cell is used in doped polysilicon cell electrodestructures to control leakage current and memory cell array edgeprocessing effects but does not contain information.

Furthermore, in an embodiment of the present disclosure, a thickness ofthe dual layer control channel structure is equal to or less than athickness of a doped polysilicon control channel structure in a range of5 nm to 10 nm. Thus, memory cell density is maintained and evenincreased in the absence of any dummy cells in the non-volatile memorycell device array.

The embodiments of the inventive concept have been disclosed above forillustrative purposes. Those of ordinary skill in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and spirit of the inventiveconcept as disclosed in the accompanying claims.

What is claimed is:
 1. A nonvolatile memory device comprising: asubstrate; a channel structure extending in a direction perpendicular tothe substrate; a charge storage structure disposed to be in contact withthe channel structure; and a cell electrode structure disposed to be incontact with the charge storage structure in a lateral direction,wherein the channel structure comprises a hole conduction layer and anelectron conduction layer, wherein the nonvolatile memory device furthercomprises: a control electrode structure disposed over or below the cellelectrode structure; and a control channel layer disposed adjacent tothe control electrode structure, wherein the control channel layer is aportion of the electron conduction layer of the channel structure andexcludes the hole conduction layer.
 2. The nonvolatile memory device ofclaim 1, wherein the hole conduction layer and the electron conductionlayer are disposed to be in contact with each other along a directionperpendicular to the substrate.
 3. The nonvolatile memory device ofclaim 1, wherein the charge storage layer comprises: a charge tunnelinglayer in contact with the channel structure; a charge trap layer incontact with the charge tunneling layer; and a charge barrier layer incontact with the charge trap layer.
 4. The nonvolatile memory device ofclaim 1, wherein the cell electrode structure comprises a gate electrodelayer disposed adjacent to the charge barrier layer in a lateraldirection.
 5. The nonvolatile memory device of claim 1, wherein a holemobility of the hole conduction layer is greater than a hole mobility ofthe electron conduction layer, and wherein an electron mobility of theelectron conduction layer is greater than an electron mobility of thehole conduction layer.
 6. The nonvolatile memory device of claim 1,wherein the electron conduction layer comprises indium-gallium-zinc(In—Ga—Zn) oxide.
 7. The nonvolatile memory device of claim 1, whereinthe hole conduction layer comprises a semiconductor material including ahole as a charge carrier.
 8. The nonvolatile memory device of claim 7,wherein the semiconductor material comprises at least one of silicon(Si), germanium (Ge), silicon germanium (SiGe), gallium arsenic (GaAs)and indium gallium arsenic (InGaAs).
 9. The nonvolatile memory device ofclaim 1, wherein the hole conduction layer is disposed on the chargestorage structure, and wherein the electron conduction layer is disposedon the hole conduction layer.
 10. The nonvolatile memory device of claim1, further comprising: a control dielectric layer disposed to be incontact with the control electrode structure, wherein the controlelectrode structure includes an interlayer dielectric layer and acontrol electrode layer, and wherein the control channel layer isdisposed adjacent to the control dielectric layer and electricallyconnected to the channel structure.
 11. The nonvolatile memory device ofclaim 1, further comprising a control dielectric layer disposed to be incontact with the control electrode structure, wherein the controlchannel layer extends along the control dielectric layer.
 12. Anonvolatile memory device comprising: a substrate; a channel structureextending in a direction perpendicular to the substrate; a chargestorage structure disposed to be in contact with the channel structure;a cell electrode structure disposed to be in contact with the chargestorage structure in a lateral direction; a control electrode structuredisposed over or below the cell electrode structure on the substrate,the control electrode structure including an interlayer dielectric layerand a control electrode layer; a control dielectric layer disposed to bein contact with the control electrode structure; and a control channellayer disposed adjacent to the control dielectric layer and electricallyconnected to the channel structure, wherein the channel structurecomprises a hole conduction layer and an electron conduction layer,wherein the control channel layer is a portion of the electronconduction layer configured to extend along the control dielectric layerand the control channel layer excludes the hole conduction layer. 13.The nonvolatile memory device of claim 12, wherein the hole conductionlayer and the electron conduction layer are disposed to be in contactwith each other along a direction perpendicular to the substrate. 14.The nonvolatile memory device of claim 12, wherein the charge storagelayer comprises: a charge tunneling layer in contact with the channelstructure; a charge trap layer in contact with the charge tunnelinglayer; and a charge barrier layer in contact with the charge trap layer.15. The nonvolatile memory device of claim 12, wherein the cellelectrode structure comprises a gate electrode layer disposed adjacentto the charge barrier layer in a lateral direction.
 16. The nonvolatilememory device of claim 12, wherein a hole mobility of the holeconduction layer is greater than a hole mobility of the electronconduction layer, and wherein an electron mobility of the electronconduction layer is greater than an electron mobility of the holeconduction layer.
 17. The nonvolatile memory device of claim 12, whereinthe electron conduction layer comprises indium-gallium-zinc (In—Ga—Zn)oxide.
 18. The nonvolatile memory device of claim 12, wherein the holeconduction layer comprises a semiconductor material including a hole asa charge carrier, wherein the semiconductor material comprises at leastone of silicon (Si), germanium (Ge), silicon germanium (SiGe), galliumarsenic (GaAs) and indium gallium arsenic (InGaAs).
 19. The nonvolatilememory device of claim 12, wherein the hole conduction layer is disposedon the charge storage structure, and wherein the electron conductionlayer is disposed on the hole conduction layer.